TDA8920C_09 Datasheet, PDF (12/39 Pages) NXP Semiconductors – 2 ´ 110 W class-D power amplifier

NXP Semiconductors
TDA8920C
2 × 110 W class-D power amplifier
IN1P
IN1M
V_in
IN2P
IN2M
OUT1
SGND
OUT2
Fig 7.
power stage
mbl466
Input configuration for mono BTL application
9. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_P[1]
I_ORM
supply voltage
repetitive peak output current
Standby, Mute modes; V_DD − V_SS
maximum output current limiting
T_stg
T_amb
T_j
V_MODE
V_OSC
V_I
V_PROT
V_ESD
I_q(tot)
V_PWM(p-p)
storage temperature
ambient temperature
junction temperature
voltage on pin MODE
voltage on pin OSC
input voltage
voltage on pin PROT
electrostatic discharge voltage
total quiescent current
peak-to-peak PWM voltage
referenced to SGND
referenced to SGND; pin IN1P; IN1M;
IN2P and IN2M
referenced to voltage on pin VSSD
Human Body Model (HBM)
Charged Device Model (CDM)
Operating mode; no load; no filter; no
RC-snubber network connected
on pins OUT1 and OUT2
[1] V_P is the supply voltage on pins VDDP1, VDDP2 and VDDA.
10. Thermal characteristics
Min Max
Unit
-
65
V
9.2
-
A
−55 +150
°C
−40 +85
°C
-
150
°C
0
6
V
0
SGND + 6 V
−5
+5
V
0
12
V
−2000 +2000
V
−500 +500
V
-
75
mA
-
120
V
Table 7.
Symbol
R_th(j-a)
R_th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to case
Conditions
in free air
Typ
Unit
40
K/W
1.1
K/W
TDA8920C_2
Product data sheet
Rev. 02 — 11 June 2009
© NXP B.V. 2009. All rights reserved.
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