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| M58LR128KT Datasheet, PDF (83/110 Pages) Numonyx B.V – 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories | |||
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M58LR128KT, M58LR128KB, M58LR256KT, M58LR256KB
Common Flash interface
Table 44. CFI query system interface information
Offset Data
Description
01Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
01Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
01Dh
0085h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
01Eh
01Fh
020h
021h
022h
023h
024h
025h
026h
0095h
0004h
0009h
000Ah
0000h
0004h
0004h
0002h
0000h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
Typical time-out per single byte/word program = 2n µs
Typical time-out for Buffer Program = 2n µs
Typical time-out per individual block erase = 2n ms
Typical time-out for full chip erase = 2n ms
Maximum time-out for word program = 2n times typical
Maximum time-out for Buffer Program = 2n times typical
Maximum time-out per individual block erase = 2n times typical
Maximum time-out for chip erase = 2n times typical
Value
1.7V
2V
8.5V
9.5V
16µs
512µs
1s
NA
256µs
8192µs
4s
NA
83/111
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