M58LR128KT Datasheet, PDF (1/110 Pages) Numonyx B.V – 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories

M58LR128KT M58LR128KB
M58LR256KT M58LR256KB
128 or 256 Mbit (×16, multiple bank, multilevel interface, burst)
1.8 V supply Flash memories
Preliminary Data
Features
■ Supply voltage
– V_DD = 1.7 V to 2.0 V for program, erase and
read
– V_DDQ = 1.7 V to 2.0 V for I/O buffers
– V_PP = 9 V for fast program
■ Synchronous/asynchronous read
– Synchronous burst read mode:
54 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 70 ns, 85 ns
■ Synchronous burst read suspend
■ Programming time
– 2.5 µs typical word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple bank memory array:
8 Mbit banks for the M58LR128KT/B
16 Mbit banks for the M58LR256KT/B
– Parameter blocks (top or bottom location)
■ Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for block lock-down
– Absolute write protection with V_PP = V_SS
Not packaged separately
■ Security
– 64 bit unique device number
– 2112 bit user programmable OTP cells
■ Common Flash interface (CFI)
■ 100 000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 20h
– Top device codes:
M58LR128KT: 88C4h
M58LR256KT: 880Dh
– Bottom device codes
M58LR128KB: 88C5h
M58LR256KB: 880Eh
The M58LRxxxKT/B memories are only available as part of a multichip package.
March 2008
Rev 3
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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