M58LR128KT Datasheet, PDF (54/110 Pages) Numonyx B.V – 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories

Program and erase times and endurance cycles
M58LR128KT, M58LR128KB, M58LR256KT,
10 Program and erase times and endurance cycles
The program and erase times and the number of program/ erase cycles per block are shown
in Table 18. Exact erase times may change depending on the memory array condition. The
best case is when all the bits in the block are at ‘0’ (pre-programmed). The worst case is
when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the system overhead is
negligible with respect to the erase time. In the M58LRxxxKT/B the maximum number of
program/erase cycles depends on the V_PP voltage supply used.
Table 18. Program/erase times and endurance cycles^{(1) (2)}
Parameter
Condition
Typical after
Min Typ 100kW/E Max Unit
cycles
Parameter block (16 Kword)
0.4
1
2.5 s
Erase
Main block (64
Kword)
Preprogrammed
Not preprogrammed
1.2
3
1.5
4
s
4
s
Word program
12
Single Word
Program⁽³⁾
Buffer program
12
Buffer (32 words) (buffer program)
384
180 µs
180 µs
µs
Main block (64 Kword)
768
ms
Suspend latency
Program
Erase
20
25 µs
20
25 µs
Program/erase cycles ^{Main blocks}
(per block)
Parameter blocks
100 000
100 000
cycles
cycles
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