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| M29W128GH Datasheet, PDF (62/94 Pages) Numonyx B.V – 128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory | |||
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DC and AC parameters
M29W128GH, M29W128GL
Table 24. Device capacitance(1)
Symbol
Parameter
Test condition
Min
Max
Unit
CIN
Input capacitance
COUT
Output capacitance
1. Sampled only, not 100% tested.
VIN = 0 V
VOUT = 0 V
6
pF
12
pF
Table 25. DC characteristics
Symbol
Parameter
ILI(1) Input leakage current
ILO Output leakage current
ICC1 Read current
Random Read
Page Read
Test condition
0 V â¤VIN â¤VCC
0 V â¤VOUT â¤VCC
E = VIL, G = VIH,
f = 6 MHz
E = VIL, G = VIH,
f = 10 MHz
Min Typ Max Unit
±1
µA
±1
µA
10 mA
15 mA
ICC2 Supply current (Standby)
ICC3(2) Supply current (Program/Erase)
IPP1
IPP2
Program
current
(Program)
IPP3
Read or
Standby
Reset
Program
operation
ongoing
E = VCCQ ± 0.2 V,
RP = VCCQ ± 0.2 V
Program/Erase
controller active
VPP/WP =
VIL or VIH
VPP/WP = VPPH
VPP/WP â¤VCC
RP = VSS ± 0.2 V
VPP/WP = 12 V ± 5%
VPP/WP = VCC
100 µA
20 mA
20 mA
1
5
µA
1
5
µA
1
10 mA
1
5
µA
IPP4
Program
current (Erase)
Erase
operation
ongoing
VIL Input Low voltage
VIH Input High voltage
VOL Output Low voltage
VOH Output High voltage
VID
VPPH
Identification voltage
Voltage for VPP/WP Program
acceleration
VPP/WP = 12 V ± 5%
VPP/WP = VCC
VCC ⥠2.7 V
VCC ⥠2.7 V
IOL = 100 µA, VCC = VCC(min),
VCCQ = VCCQ(min)
IOH = 100 µA, VCC = VCC(min),
VCCQ = VCCQ(min)
â0.5
0.7VCCQ
3
10 mA
1
5
µA
0.3VCCQ V
VCCQ+0.4 V
0.15VCCQ V
0.85VCCQ
11.5
11.4
V
12.5
V
12.6
V
VLKO(2)
Program/Erase lockout supply
voltage
2.3
2.5
V
1. The maximum input leakage current is ±5 µA on the VPP/WP pin.
2. Sampled only, not 100% tested.
62/94
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