M29W128GH Datasheet, PDF (1/94 Pages) Numonyx B.V – 128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block) 3 V supply Flash memory

M29W128GH
M29W128GL
128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block)
3 V supply Flash memory
Features
■ Supply voltage
– V_CC = 2.7 to 3.6 V for Program, Erase and
Read
– V_CCQ = 1.65 to 3.6 V for I/O buffers
– V_PPH = 12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page size: 8 words or 16 bytes
– Page access: 25, 30 ns
– Random access: 60 (only available upon
customer request) or 70, 80 ns
■ Fast Program commands
– 32 words (64-byte write buffer)
■ Enhanced Buffered Program commands
– 256 words
■ Programming time
– 16 µs per byte/word typical
– Chip program time: 5 s with V_PPH and 8 s
without V_PPH
■ Memory organization
– M29128GH/L: 128 main blocks,
128 Kbytes/64 Kwords each
■ Program/Erase controller
– Embedded byte/word program algorithms
■ Program/ Erase Suspend and Resume
– Read from any block during Program
Suspend
– Read and Program another block during
Erase Suspend
■ Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer/Enhanced Buffered Program
commands
Table 1. Device summary
Root part number
M29W128GH: uniform, last block protected by V_PP/WP
M29W128GL: uniform, first block protected by V_PP/WP
TSOP56 (N)
14 x 20 mm
BGA
TBGA64 (ZA)
10 x 13 mm
– Faster Production/Batch Programming
– Faster Block and Chip Erase
■ V_PP/WP pin for Fast Program and Write:
protects first or last block regardless of block
protection settings
■ Software protection:
– Volatile protection
– Non-volatile protection
– Password protection
■ Common Flash interface
– 64 bit security code
■ 128 word extended memory block
– Extra block used as security block or to
store additional information
■ Low power consumption
– Standby and automatic standby
■ Minimum 100,000 Program/Erase cycles per
block
■ ECOPACK^® packages
Device code
227Eh + 2221h + 2201h
227Eh + 2221h + 2200h
March 2008
Rev 4
1/94
www.numonyx.com
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