M29W064FT Datasheet, PDF (56/69 Pages) Numonyx B.V – 64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory

Common Flash interface (CFI)
M29W064FT, M29W064FB
Table 23. CFI query identification string⁽¹⁾
Address
x 16 x 8
Data
Description
Value
10h 20h 0051h
11h 22h 0052h Query unique ASCII string ‘QRY’
12h 24h 0059h
13h 26h 0002h _{Primary algorithm command set and control interface ID code}
14h 28h 0000h ^{16-bit ID code defining a specific algorithm}
15h 2Ah 0040h _{Address for primary algorithm extended query table (see}
16h 2Ch 0000h ^{Table 26)}
17h 2Eh 0000h _{Alternate vendor command set and control interface ID code}
18h 30h 0000h ^{second vendor - specified algorithm supported}
19h 32h 0000h
Address for alternate algorithm extended query table
1Ah 34h 0000h
‘Q’
‘R’
‘Y’
AMD
compatible
P = 40h
NA
NA
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 24.
Address
x 16 x 8
CFI query system interface information
Data
Description
Value
V_CC logic supply minimum program/erase voltage
1Bh 36h 0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V_CC logic supply maximum program/erase voltage
1Ch 38h 0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V_PP [programming] supply minimum program/erase voltage
1Dh 3Ah 00B5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V_PP [programming] supply maximum program/erase voltage
1Eh 3Ch 00C5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh 3Eh 0004h Typical timeout per single byte/word program = 2ⁿ µs
20h 40h 0000h Typical timeout for minimum size write buffer program = 2ⁿ µs
21h 42h 000Ah Typical timeout per individual block erase = 2ⁿ ms
22h 44h 0000h Typical timeout for full chip erase = 2ⁿ ms
23h 46h 0004h Maximum timeout for byte/word program = 2ⁿ times typical
24h 48h 0000h Maximum timeout for write buffer program = 2ⁿ times typical
25h 4Ah 0003h Maximum timeout per individual block erase = 2ⁿ times typical
26h 4Ch 0000h Maximum timeout for chip erase = 2ⁿ times typical
2.7 V
3.6 V
11.5 V
12.5 V
16 µs
NA
1s
NA
256 µs
NA
8s
NA
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