M29W064FT Datasheet, PDF (1/69 Pages) Numonyx B.V – 64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory

M29W064FT
M29W064FB
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block)
3 V supply Flash memory
Preliminary Data
Features
■ Supply voltage
– V_CC = 2.7 V to 3.6 V for program, erase,
read
– V_PP =12 V for fast program (optional)
■ Asynchronous random/page read
– Page width: 4 words
– Page access: 25 ns
– Random access: 60, 70 ns
■ Programming time
– 10 µs per byte/word typical
– 4 words/8 bytes program
■ 135 memory blocks
– 1 boot block and 7 parameter blocks,
8 Kbytes each (top or bottom location)
– 127 main blocks, 64 Kbytes each
■ Program/erase controller
– Embedded byte/word program algorithms
■ Program/erase suspend and resume
– Read from any block during program
suspend
– Read and program another block during
erase suspend
■ Unlock Bypass Program command
– Faster production/batch programming
■ V_PP/WP pin for fast program and write protect
■ Temporary block unprotection mode
■ Common Flash interface
– 64-bit security code
Table 1.
Device summary
Root part number
M29W064FT
M29W064FB
TSOP48 (N)
12 x 20 mm
■ 100,000 program/erase cycles per block
■ Extended memory block
– Extra block used as security block or to
store additional information
■ Low power consumption
– Standby and automatic standby
■ Electronic signature
– Manufacturer code: 0020h
■ Automotive device grade 3
– Temperature: -40 to 125 °C
– Automotive grade certified (AEC-Q100)
■ ECOPACK^® packages
Device code
22EDh
22FDh
March 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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