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M58WR016KU Datasheet, PDF (1/123 Pages) STMicroelectronics – 16- or 32-Mbit (×16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories | |||
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M58WR016KU M58WR016KL M58WR032KU
M58WR032KL M58WR064KU M58WR064KL
16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst)
1.8 V supply Flash memories
Features
â Supply voltage
â VDD = 1.7 V to 2 V for Program, Erase and
Read
â VDDQ = 1.7 V to 2 V for I/O buffers
â VPP = 9 V for fast Program
â Multiplexed address/data
â Synchronous / Asynchronous Read
â Synchronous Burst Read mode: 86 MHz
â Random Access: 60 ns, 70 ns
â Synchronous Burst Read Suspend
â Programming time
â 10 µs by Word typical for Factory Program
â Double/Quadruple Word Program option
â Enhanced Factory Program options
â Memory blocks
â Multiple Bank memory array: 4 Mbit Banks
â Parameter Blocks (top or bottom location)
â Dual operations
â Program Erase in one Bank while Read in
others
â No delay between Read and Write
operations
â Block locking
â All blocks locked at Power up
â Any combination of blocks can be locked
â WP for Block Lock-Down
â Security
â 128 bit user programmable OTP cells
â 64 bit unique device number
â Common Flash Interface (CFI)
â 100,000 program/erase cycles per block
FBGA
VFBGA44 (ZA)
7.5 Ã 5 mm
â Electronic signature
â Manufacturer Code: 20h
â Top Device Code,
M58WR016KU: 8823h
M58WR032KU: 8828h
M58WR064KU: 88C0h
â Bottom Device Code,
M58WR016KL: 8824h
M58WR032KL: 8829h
M58WR064KL: 88C1h
â ECOPACK® packages available
December 2007
Rev 2
1/123
www.numonyx.com
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