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28F640W30 Datasheet, PDF (1/102 Pages) Intel Corporation – 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) | |||
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Numonyx⢠Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Product Features
Datasheet
 High Performance Read-While-Write/Erase
â Burst Frequency at 40 MHz
â 70 ns Initial Access Speed
â 25 ns Page-Mode Read Speed
â 20 ns Burst-Mode Read Speed
â Burst-Mode and Page-Mode in All Blocks
and across All Partition Boundaries
â Burst Suspend Feature
â Enhanced Factory Programming:
3.5 µs per Word Program Time
â Programmable WAIT Signal Polarity
 Flash Power
â VCC = 1.70 V â 1.90 V
â VCCQ = 2.20 V â 3.30 V
â Standby Current (130 nm) = 8 µA (typ.)
â Read Current = 7 mA
(4 word burst, typical)
 Flash Software
â 5 µs/9 µs (typ.) Program/Erase Suspend
Latency Time
â Numonyx⢠Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
 Quality and Reliability
â Operating Temperature:
â40 °C to +85 °C
â 100K Minimum Erase Cycles
â 130 nm ETOX⢠VIII Process
â 180 nm ETOX⢠VII Process
 Flash Architecture
â Multiple 4-Mbit Partitions
â Dual Operation: RWW or RWE
â Parameter Block Size = 4-Kword
â Main block size = 32-Kword
â Top or Bottom Parameter Blocks
 Flash Security
â 128-bit Protection Register: 64 Unique
Device Identifier Bits; 64 User OTP
Protection Register Bits
â Absolute Write Protection with VPP at
Ground
â Program and Erase Lockout during Power
Transitions
â Individual and Instantaneous Block
Locking/Unlocking with Lock-Down
 Density and Packaging
â 130 nm: 32Mb, 64Mb, and 128Mb in VF
BGA Package; 64Mb, 128Mb in QUAD+
Package
â 180 nm: 32Mb and 128Mb Densities in VF
BGA Package; 64Mb Density in µBGA*
Package
â 56 Active Ball Matrix, 0.75 mm Ball-Pitch
â 16-bit Data Bus
Order Number: 290702-13
November 2007
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