NTE38 Datasheet, PDF (3/3 Pages) NTE Electronics – Silicon Complementary Transistors High Voltage, Medium Power Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Second Breakdown
Second Breakdown Collector Current
NTE38
NTE175
Switching Characteristics
I_S/b t = 1s (Non–Repetitive), V_CE = 40V
V_CE = 100V
875 –
350 –
– mA
– mA
NTE38
Rise Time
Storage Time
Fall Time
NTE175
Rise Time
Storage Time
Fall Time
t_r
V_CC = 200V, I_C = 1A
t_s
I_B1 = I_B2 = 125mA
t_f
– – 0.6 µs
– – 2.5 µs
– – 0.6 µs
t_r
V_CC = 200V, I_B1 = 100mA, R_L = 200Ω – – 3.0 µs
t_s
I_C = 1A
I_B1 = I_B2 = 100mA
– – 4.0 µs
t_f
– – 3.0 µs
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.360
(9.14)
Min
Base
.200
(5.08)
Collector/Case
Emitter