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NTE38 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon Complementary Transistors High Voltage, Medium Power Switch
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
NTE38
VCEO(sus) IC = 200mA, IB = 0
NTE175
350 – – V
300 – – V
Collector–Emitter Sustaining Voltage
NTE38 Only
VCEX(sus) IC = 200mA, VBE = –1.5V, L = 10mH
400 – – V
VCER(sus) IC = 200mA, IB = 0, RBE = 50Ω
375 – – V
Emitter–Base Breakdown Voltage
NTE38 Only
VEBO IE = 0.5mA, IC = 0
6––V
Collector Cutoff Current
ICEO VCE = 150V, IB = 0
– – 5 mA
Collector Cutoff Current
NTE38
ICEV VCE = 250V, VBE(off) = 1.5V
– – 0.5 mA
VCE = 250V, VBE(off) = 1.5V, TC = +100°C –
– 5.0 mA
VCE = 315V, VBE(off) = 1.5V
– – 0.5 mA
VCE = 315V, VBE(off) = 1.5V, TC = +100°C –
– 5.0 mA
VCE = 360V, VBE(off) = 1.5V
– – 0.5 mA
VCE = 360V, VBE(off) = 1.5V, TC = +100°C –
– 5.0 mA
NTE175
ICEX VCE = 450V, VBE(off) = 1.5V
– – 1.0 mA
VCE = 300V, VBE(off) = 1.5V, TC = +150°C –
– 3.0 mA
Emitter Cutoff Current
IEBO VEB = 6V, IC = 0
– – 0.5 mA
ON Characteristics (Note 2)
DC Current Gain
NTE38
NTE175
Collector–Emitter Saturation Voltage
NTE38
NTE175
hFE
VCE(sat)
IC = 1A, VCE = 4V
IC = 0.1A, VCE = 10V
IC = 1A, VCE = 2V
IC = 1A, VCE = 10V
IC = 1A, IB = 125mA
10 – 100
40 – –
8 – 80
25 – 100
– – 2.0 V
– – 0.75 V
Base–Emitter Saturation Voltage
NTE38
NTE175
Base–Emitter ON Voltage
NTE175 Only
Dynamic Characteristics
VBE(sat) IC = 1A, IB = 125mA
IC = 1A, IB = 100mA
VBE(on) IC = 1A, VCE = 10V
V
– – 1.4
– – 1.4 V
– – 1.4 V
Current Gain –Bandwidth Product
NTE38
NTE175
fT
IC = 200mA, VCE = 10V, ftest = 5MHz,
Note 3
20 –
15 –
– MHz
– MHz
Output Capacitance (NTE175 Only)
Cob VCB = 10V, IE = 0, f = 1MHz
– – 120 pF
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe|  ftest
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