NTE312 Datasheet, PDF(3/3 Page) NTE Electronics – N-Channel Silicon Junction Field Effect Transistor

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NTE312 Datasheet, PDF (3/3 Pages) NTE Electronics – N-Channel Silicon Junction Field Effect Transistor

◁

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.021 (.445) Dia Max

.100 (2.54)

GSD

.050 (1.27)

.105 (2.67) Max

.205 (5.2) Max

.165

(4.2)

Max

.105 (2.67) Max

NOTE: Drain and Source are interchangeable.