NTE312 Datasheet, PDF (1/3 Pages) NTE Electronics – N-Channel Silicon Junction Field Effect Transistor

NTE312
N–Channel Silicon Junction
Field Effect Transistor
Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO–92 package.
Features:
D High Power Gain: 10dB Min at 400MHz
D High Transconductance: 4000 µmho Min at 400MHz
D Low C_rss: 1pF Max
D High (Y_fs) / C_iss Ratio (High–Frequency Figure–of–Merit)
D Drain and Gate Leads Separated for High Maximum Stable Gain
D Cross–Modulation Minimized by Square–Law Transfer Characteristic
D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Drain–Gate Voltage, V_DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Gate Current, I_G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (T_A = +25°C ), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/°C
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), T_L . . . . . . . . . . . . . . . +260°C