NTE312 Datasheet, PDF (2/3 Pages) NTE Electronics – N-Channel Silicon Junction Field Effect Transistor

Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V_(BR)GSS I_G = –1.0µA, V_DS = 0
–30 –
–
V
Gate Reverse Current
I_GSS V_GS = –20V, V_DS = 0
–
– –1.0 nA
Gate 1 Leakage Current
I_G1SS V_G1S = –20V, V_DS = 0, T_A = +100°C –
– –0.5 µA
Gate–Source Cutoff Voltage
V_GS(off) V_DS = 15V, I_D = 10mA
–1.0 – –6.0 V
ON Characteristics
Zero–Gate Voltage Drain Current
Small–Signal Characteristics
I_DSS V_DS = 15V, V_GS = 0, Note 1
5.0 – 15 mA
Forward Transfer Admittance
Input Admittance
|y_fs|
Re(y_is)
V_DS = 15V, V_GS = 0, f = 1kHz
100MHz V_DS = 15V, V_GS = 0
400MHz
4500 – 7500 µmhos
–
– 100 µmhos
–
– 1000 µmhos
Output Admittance
Output Conductance
|y_os|
Re(y_os)
V_DS = 15V, V_GS = 0, f = 1kHz
100MHz V_DS = 15V, V_GS = 0
400MHz
–
– 50 µmhos
–
– 75 µmhos
–
– 100 µmhos
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Input Susceptance
Re(y_fs)
C_iss
C_rss
I_M(Yis)
V_DS = 15V, V_GS = 0, f = 400MHz
V_DS = 15V, V_GS = 0, f = 1.0MHz
V_DS = 15V, V_GS = 0, f = 1.0MHz
100MHz V_DS = 15V, V_GS = 0
400MHz
4000 –
– µmhos
–
– 4.5 pF
–
– 1.0 pF
–
– 3.0 mmho
–
– 12.0 mmho
Functional Characteristics
Noise Figure
NF
100MHz V_DS = 15V, I_D = 5mA,
400MHz ^{RiG = 1kΩ}
–
– 2.0 dB
–
– 4.0 dB
Common Source Power Gain
G_ps 100MHz V_DS = 15V, I_D = 5mA,
400MHz ^{RiG = 1kΩ}
18 –
–
dB
10 –
–
dB
Output Susceptance
I_M(Yos) 100MHz V_DS = 15V, V_GS = 0
400MHz
–
– 1000 µmhos
–
– 4000 µmhos
Note 1. tp = 100ms, Duty Cycle = 10%.