NTE2114 Datasheet, PDF (2/4 Pages) NTE Electronics – Integrated Circuit MOS, Static 4K RAM, 300ns

DC Electrical Characteristics: (T_A = 0° to +70°, V_CC = 5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Max Units
Logical “1” Input Voltage
V_IH
2.0 V_CC
V
Logical “0” Input Voltage
V_IL
–0.5 0.8
V
Logical “1” Output Voltage V_OH I_OH = –1.0mA
2.4
–
V
Logical “0” Output Voltage V_OL I_OL = 2.1mA
–
0.4
V
Input Load Current
I_LI V_IN = 0 to 5.25V
–10 10
µA
Output Leakage Current
I_LO V_O = 4V to 0.4V, CS = V_IH
–10 10
µA
Power Supply Current
I_CC1 All Inputs = 5.25V, T_A = 25°C –
95
mA
Power Supply Current
I_CC2 All Inputs = 5.25V, T_A = 0°C
–
100 mA
AC Electrical Characteristics: (T_A = 0°C to +70°C, V_CC = 5V ±5%, Note 2 unless otherwise specified)
Parameter
Symbol Test Conditions Min Max Units
READ CYCLE
Read Cycle Time (WE = V_IH)
Access Time
Chip Select to Output Valid
Chip Select to Output Active
Chip Select to Output TRI–STATE
Output Hold from Address Change
WRITE CYCLE
t_RC
t_A
t_CO
t_CX
t_COT
t_OHA
300
–
ns
–
300
ns
–
100
ns
20
–
ns
0
80
ns
10
–
ns
Write Cycle Time
Write Pulse Width
Write Recovery Time
Data Set–Up Time
Data Hold Time
Write Enable to Output TRI–STATE
Write Enable to Output Valid
t_WC
t_WP
t_WR
t_DS
t_DH
t_WOT
t_WO
300
–
ns
150
–
ns
0
–
ns
150
–
ns
0
–
ns
0
80
ns
–
100
ns
Capacitance: (T_A = +25°C, f = 1 MH_Z, Note 3 unless otherwise specified)
Parameter
Symbol Test Conditions Min Max
Input Capacitance
C_IN All Inputs V_IN = 0V
–
5
Output Capacitance
C_OUT V_O = 0V
–
10
Note 1: Typical values at T_A = +25°C.
Note 2: All input transitions ≤ 10ns.Timing referenced to V_IL(MAX) or V_IH(MIN) for inputs,
0.8V and 2V for output. For test purposes, input levels should swing between
0V and 3V. Output load = 1 TTL gate and C_L = 100 pF.
Note 3: This parameter is guaranteed by periodic testing.
Units
pF
pF