NTE2114 Datasheet, PDF (1/4 Pages) NTE Electronics – Integrated Circuit MOS, Static 4K RAM, 300ns

NTE2114
Integrated Circuit
MOS, Static 4K RAM, 300ns
Description:
The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon–
gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for
operation. The data is read out nondestructively and has the same polarity as the input data. Com-
mon input/output pins are provided.
The separate chip select input (CS) allows easy memory expansion by OR–tying individual devices
to a data bus.
Features
D All Inputs and Outputs Directly TTL Compatible
D Static Operation: No Clocks or Refreshing Required
D Low Power: 225mW Typ
D High Speed: Down to 300ns Access Time
D TRI–STATE Output for Bus interface
D Common Data In and Data Out Pins
D Single 5V Supply
D Standard 18–Lead DIP Package
Absolute Maximum Ratings:
Voltage at Any Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5V to +7V
Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 10sec), T_L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Recommended Operating Conditions:
Parameter
Symbol
Supply Voltage
V_CC
Ambient temperature
T_A
Test Conditions
Min Max Units
4.75 5.25
V
0
+70
°C