COP888CF Datasheet, PDF (9/44 Pages) National Semiconductor (TI) – 8-Bit CMOS ROM Based Microcontrollers with 4k Memory and A/D Converter

DC Electrical Characteristics 888CF: (Continued)
−40˚C ≤ T_A ≤ +85˚C unless otherwise specified
Parameter
Conditions
RAM Retention Voltage, V_r
500 ns Rise
and Fall Time (Min)
Input Capacitance
Load Capacitance on D2
Min
Typ
2
Max
7
1000
Units
V
pF
pF
Note 11: Rate of voltage change must be less then 0.5 V/ms.
Note 12: Supply current is measured after running 2000 cycles with a square wave CKI input, CKO open, inputs at rails and outputs open.
Note 13: The HALT mode will stop CKI from oscillating in the RC and the Crystal configurations. Test conditions: All inputs tied to V_CC, L and G0–G5 configured as
outputs and set high. The D port set to zero. The A/D is disabled. V_REF is tied to AGND (effectively shorting the Reference resistor). The clock monitor is disabled.
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