THS4500-EP Datasheet, PDF (8/38 Pages) National Semiconductor (TI) – WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIER

THS4500-EP
SLOS832 – JUNE 2013
www.ti.com
ELECTRICAL CHARACTERISTICS: V_S = 5 V (continued)
Applicable for –55ºC ≤ T_J ≤ +125ºC, R_F = R_G = 392 Ω, R_L = 800 Ω, G = +1, and single-ended input, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OUTPUT COMMON-MODE VOLTAGE CONTROL
Small-signal bandwidth
Slew rate
Minimum gain
R_L = 400 Ω
2 V_PP Step
180
80
0.92
MHz
V/μs
V/V
Maximum gain
1.17
V/V
Common-mode offset voltage
-5.6
35
mV
Input bias current
Input voltage range
V_OCM = 2.5 V
1.3
3
μA
3.7
V
Input impedance
25 || 1
kΩ || pF
Maximum default voltage
Minimum default voltage
POWER SUPPLY
V_OCM left floating
V_OCM left floating
2.25
2.75
V
V
Specified operating voltage
15
V
Maximum quiescent current
38
mA
Minimum quiescent current
10
mA
Power-supply rejection (+PSRR)
66
dB
POWER -DOWN
Enable voltage threshold
Device enabled ON above 2.1 V
2.1
V
Disable voltage threshold
Device disabled OFF below 0.7 V
0.7
V
Power-down quiescent current
1400
μA
Input bias current
140
μA
Input impedance
50 || 1
kΩ || pF
Turn-on time delay
1000
ns
Turn-off time delay
800
ns
100,000,000
10,000,000
1,000,000
Wirebond Voiding Fail Mode
100,000
10,000
Electromigration Failure Mode
1,000
80
90
100
110
120
130
140
150
Continuous T_J (°C)
(1) See datasheet for absolute maximum and minimum recommended operating conditions.
(2) Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect
life).
(3) Enhanced plastic product disclaimer applies.
(4) Electromigration calculation is based on output switching 50% duty cycle at max load of 120 mA.
Figure 1. THS4500-EP Derating Chart
8
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