BUK7509-75A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
ID ¹¹⁰
(A) ₁₀₀
90
80
70
60
50
40
30
20
10
0
0
03nb49
Tj = 175 ^OC
Tj = 25 ^OC
2
4 VGS (V) 6
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
10
VGS (V)
9
8
7
6
5
4
3
2
1
0
0
VDD= 14 V
50
03nb47
VDD= 60 V
100 _{QG (nC)} 150
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
120
IS
(A)
100
03nb46
80
60
Tj = 175 ^OC
40
Tj = 25 ^OC
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07655
Product specification
Rev. 02 — 06 November 2000
© Philips Electronics N.V. 2000. All rights reserved.
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