BUK7509-75A Datasheet, PDF (3/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
120
Pder (%)
100
03na19
120
Ider
(%)
100
03aa24
80
80
60
60
40
40
20
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
P_der
=
-------^P----^t--^o--^t-------
P
×
100
%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
V_GS ≥ 4.5 V
I_der = -_I------^I---^D-------- × 100%
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
1000
ID
(A)
100
RDSon = VDS/ ID
03nb54
tp = 10 us
100 us
10 ^P
δ
=
tp
T
D.C.
1 ms
10 ms
tp
t
T
1
1
10
100 ms
VDS (V) 100
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07655
Product specification
Rev. 02 — 06 November 2000
© Philips Electronics N.V. 2000. All rights reserved.
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