BUK7509-75A Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7509-75A; BUK7609-75A
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
−
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
−
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
75
−
ns
270
−
nC
ID ⁴⁰⁰
(A)
350
300
16 12 10
VGS (V) = 20
9.5
8.5
7.5
250
200
150
100
50
0
0
2
4
6
03nb51
6.5
5.5
4.5
8
10
VDS (V)
12
RDSon
(mΩ)
11
10
9
8
7
6
5
4
5
03nb50
10
15 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
18
RDSon
(mΩ)
16
VGS (V) = 5.5
6
6.5
03nb52
7
14
8
12
9
10
10
8
6
0 40 80 120 160 200 240 280 320 360
ID (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.4
a
2.2
03nb25
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-60 -20 20
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07655
Product specification
Rev. 02 — 06 November 2000
© Philips Electronics N.V. 2000. All rights reserved.
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