BUK7506-55A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
120
ID
(A)
100
80
60
40
20
0
0
03nf27
Tj = 175 ^oC
Tj = 25 ^oC
2
4
6
VGS (V)
10
VGS
(V)
8
6
VDD = 14 V
03nf25
VDD = 44 V
4
2
0
0
20 40 60 80 100 120
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
IS
(A)
80
03nf24
60
40
20
0
0.0
Tj = 175 ^oC
0.2
0.4
0.6
Tj = 25 ^oC
0.8
1.0
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 08421
Product data
Rev. 02 — 03 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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