BUK7506-55A Datasheet, PDF (3/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
120
Pder
(%)
100
03na19
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb _(oC)
P_der = _P-------^P----^t--^o--^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
RDSon = VDS / ID
102
Capped at 75 A due to package
10
P
δ
=
tp
T
ID 180
(A)
160
03ne93
140
120
100
80
60 _{Capped at 75A due to package}
40
20
0
25 50 75 100 125 150 175 200
Tj (ºC)
V_GS ≥ 4.5 V
I_der
=
-------^I---^D--------
I
×
100 %
D ( 25 ^°C )
Fig 2. Continuous drain current as a function of
mounting base temperature.
03nf32
D.C.
tp = 10 us
100 us
1 ms
10 ms
100 ms
tp
t
T
1
1
10
102
VDS (V)
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08421
Product data
Rev. 02 — 03 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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