BUK7506-55A Datasheet, PDF (2/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
T_mb = 25 °C; V_GS = 10 V
T_mb = 25 °C
V_GS = 10 V; I_D = 25 A
T_j = 25 °C
T_j = 175 °C
Typ
−
[1] _−
−
−
5.3
−
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
I_DR
reverse drain current (DC)
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
T_mb = 25 °C; Figure 1
T_mb = 25 °C
I_DRM
pulsed reverse drain current
Avalanche ruggedness
W_DSS non-repetitive avalanche energy
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
unclamped inductive load; I_D = 75 A;
V_DS ≤ 55 V; V_GS = 10 V; R_GS = 50 Ω;
starting T_mb = 25 °C
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package
Min
−
−
−
[1] _−
[2] _−
[2] _−
−
−
−55
−55
[1] _−
[2]
−
−
Max Unit
55
V
154
A
300
W
175
°C
6.3
mΩ
13.2 mΩ
Max Unit
55
V
55
V
±20
V
154
A
75
A
75
A
616
A
300
W
+175 °C
+175 °C
154
A
75
A
616
A
1.1
J
9397 750 08421
Product data
Rev. 02 — 03 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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