MNDS26F32M-X-RH Datasheet, PDF (6/12 Pages) National Semiconductor (TI) – QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A

MNDS26F32M-X-RH REV 0C0
MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS - DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: NOTE::This section applies to -QMLV devices only and shall be read & recorded at TA = +25C before and
after each burn-in and shall not change by more than the limits indicated. The delta rejects shall be
included in the PDA calculation.
SYMBOL
Voh
PARAMETER
Logical "1"
Output Voltage
CONDITIONS
Vcc = 4.5V, Ioh = -440uA,
Delta Vin = 1V, Ven = 0.8V = Ven
NOTES
PIN-
NAME
MIN
-250
MAX
250
UNIT
mV
SUB-
GROUPS
1
Vol
Logical "0"
Vcc = 4.5V, Iol = 4mA,
Output Voltage
Delta Vin = -1V, Ven = 0.8V = Ven
-45
45
mV 1
Vcc = 4.5V, Iol = 8mA,
Delta Vin = -1V, Ven = 0.8V = Ven
-45
45
mV 1
Iin
Input Current
Vcc = 4.5V, Vin=15V (Pin under test),
other inputs -15V <= Vin <= +15V
-0.28 0.28 mA 1
Vcc = 5.5V, Vin=-15V (Pin under test),
other inputs -15V <= Vin <= +15V
-0.28 0.28 mA 1
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Power dissipation must be externally controlled at elevated temperatures.
Parameter tested go-no-go only.
Tested at 50pF guarantees limit at 15 & 5pF.
Tested at 50pF, system capacitance exceeds 5 to 15pF.
Pre and post irradiation limits are identical to those listed under AC and DC
electrical characteristics. These parts may be dose rate sensitive in a space
environment and demonstrate enhanced low dose rate effect. Radiaton end point limits
for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, Method 1019.5, Condition A.
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