MNDS26F32M-X-RH Datasheet, PDF (3/12 Pages) National Semiconductor (TI) – QUAD DIFFERENTIAL LINE RECEIVERS ALSO AVAILABLE GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5, CONDITION A

MNDS26F32M-X-RH REV 0C0
MICROCIRCUIT DATA SHEET
(Absolute Maximum Ratings)
(Note 1)
Storage Temperature Range
Operating Temperature Range
Lead Temperature
Soldering, 60 seconds
Supply Voltage
Common Mode Voltage Range
Differential Input Voltage
Enable Voltage
Output Sink Current
Maximum Power Dissipation (Pd) @ +25C
(Note 2)
Thermal Resistance (JA)
J package
W package
E package
-65 C < Ta < +150 C
-55 C < Ta < +125 C
300 C
7.0V
+25V
+25V
7.0V
50mA
500mW
100 C/W
142 C/W
87 C/W
Note 1:
Note 2:
"Absolute Maximum Ratings" are those values beyond which the safety of the device
cannot be guaranteed. They are not meant to imply that the devices should be operated
at these limits. The tables of "Electrical Characteristics" provide conditions for
actual device operation.
Derate J package 10.0mW/C above +25C, Derate W package 7.1mW/C above +25C, Derate E
package 11.5mW/C above +25C
Recommended Operating Conditions
Operating Temperature
Supply Voltage
-55 C < Ta < +125 C
4.5V to 5.5V
3