LMH6629_1011 Datasheet, PDF (6/28 Pages) National Semiconductor (TI) – Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown

3.3V Electrical Characteristics
The following specifications apply for single supply with V_S = 3.3V, R_L = 100Ω terminated to 1.65V, gain = 10V/V, V_O = 1V_PP,
V_CM = V_S/2, COMP Pin = HI (LLP-8 package), unless otherwise noted. Boldface limits apply at the temperature extremes. (Note
2)
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 5) (Note 5) (Note 5)
Units
DYNAMIC PERFORMANCE
V_O = 200 mV_PP, LLP-8 package
820
MHz
SSBW
Small signal −3dB bandwidth ^{VO = 200 mVPP, SOT23-5 package}
950
COMP Pin = LO, A_V= 4,
V_O = 200 mV_PP
730
LSBW
Large signal −3dB bandwidth ^{VO = 1VPP}
540
MHz
COMP Pin = LO, A_V= 4, V_O = 1V_PP
320
A_V= 10, V_O = 200 mV_PP,
330
LLP-8 package
0.1 dB bandwidth
A_V= 10, V_O = 200 mV_PP,
SOT23-5 package
190
MHz
Peaking
SR
Slew rate
COMP Pin = LO, A_V= 4,
V_O = 200 mV_PP
V_O = 200 mV_PP, LLP-8 package
V_O = 200 mV_PP, SOT23-5 package
A_V= 10, 1.3V step
COMP Pin = LO, A_V= 4, 1.3V step
A_V= 10, 1V step, 10% to 90%,
LLP-8 package
85
0
1.8
1100
500
0.7
dB
V/µs
t_r/ t_f
Rise/fall time
A_V= 10, 1V step, 10% to 90%,
SOT23-5 package
A_V= 4, COMP Pin = LO, 1V step,
10% to 90% (Slew Rate Limited)
0.55
ns
1.3
T_s
Settling time
A_V= 10, 1V step, ±0.1%
70
Overload Recovery
V_IN = 1V_PP
2
NOISE AND DISTORTION
HD2
HD3
OIP3
e_n
i_n
2^nd order distortion
3^rd order distortion
Two-tone 3^rd Order Intercept
Point
Noise voltage
Noise current
fc = 1MHz, V_O = 1V_PP
COMP Pin = LO, A_V= 4, fc = 1MHz,
V_O = 1V_PP
fc = 10 MHz, V_O = 1V_PP
COMP Pin = LO, fc = 10 MHz, A_V= 4V,
V_O = 1V_PP
fc = 1MHz, V_O = 1V_PP
COMP Pin = LO, A_V= 4, fc = 1MHz,
V_O = 1V_PP
fc = 10 MHz, V_O = 1V_PP
COMP pin = LO, fc = 10 MHz,
V_O = 1V_PP
fc = 25 MHz, V_O = 1V_PP composite
fc = 75 MHz, V_O = 1V_PP composite
Input referred, f > 1MHz
–82
-88
-67
-74
-94
-112
-79
–96
30
26
0.69
2.6
dBc
dBc
dBm
nV/√HZ
pA/√HZ
NF
Noise figure
R_S = R_T = 50Ω
8.0
dB
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