OPA2832 Datasheet, PDF (5/37 Pages) National Semiconductor (TI) – Dual, Low-Power, High-Speed, Fixed-Gain Operational Amplifier

OPA2832
www.ti.com ............................................................................................................................................. SBOS327C – FEBRUARY 2005 – REVISED AUGUST 2008
ELECTRICAL CHARACTERISTICS: V_S = +5V
Boldface limits are tested at +25°C.
At T_A = +25°C, G = +2V/V, and R_L = 150Ω to V_CM = 2V, unless otherwise noted (see Figure 61).
OPA2832ID, IDGK
PARAMETER
CONDITIONS
+25°C
0°C to –40°C to
+25°C⁽¹⁾ +70°C⁽²⁾ +85°C⁽²⁾
AC PERFORMANCE (see Figure 61)
Small-Signal Bandwidth
Peaking at a Gain of +1
Slew Rate
G = +1, V_O ≤ 0.5V_PP
G = +2, V_O ≤ 0.5V_PP
G = –1, V_O ≤ 0.5V_PP
V_O ≤ 0.5V_PP
G = +2, 2V Step
210
75
56
55
55
95
60
58
58
7
320
230
220
220
Rise Time
0.5V Step
4.8
5.8
5.8
5.9
Fall Time
0.5V Step
4.8
5.8
5.8
5.9
Settling Time to 0.1%
G = +2, 1V Step
46
64
66
67
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
V_O = 2V_PP, 5MHz
R_L = 150Ω
R_L = 500Ω
R_L = 150Ω
R_L = 500Ω
f > 1MHz
–59
–56
–54
–53
–62
–59
–57
–57
–56
–50
–49
–47
–72
–65
–62
–58
9.3
Input Current Noise
f > 1MHz
2.3
NTSC Differential Gain
NTSC Differential Phase
DC PERFORMANCE⁽⁴⁾
R_L = 150Ω
R_L = 150Ω
0.11
0.14
Gain Error
G = +2
±0.3
±1.5
±1.6
±1.7
G = –1
±0.2
±1.5
±1.6
±1.7
Internal R_F and R_G, Maximum
Minimum
400
455
460
462
400
345
340
338
Average Drift
±0.1
±0.1
Input Offset Voltage
±1.5
±6
±7
±7.5
Average Offset Voltage Drift
—
±20
±20
Input Bias Current
Input Bias Current Drift
V_CM = 2.0V
+5.5
—
+10
+12
+13
±45
±45
Input Offset Current
Input Offset Current Drift
V_CM = 2.0V
±0.1
±1.5
±2
±2.5
—
±10
±10
INPUT
Least Positive Input Voltage
–0.5
–0.2
0
+0.1
Most Positive Input Voltage
3.3
3.2
3.1
3.0
Input Impedance, Differential Mode
10 || 2.1
Common-Mode
400 || 1.2
OUTPUT
Least Positive Output Voltage
Most Positive Output Voltage
Current Output, Sinking and Sourcing
R_L = 1kΩ to 2.0V
R_L = 150Ω to 2.0V
R_L = 1kΩ to 2.0V
R_L = 150Ω to 2.0V
0.03
0.16
0.18
0.20
0.18
0.3
0.35
0.40
4.94
4.8
4.6
4.4
4.86
4.6
4.5
4.4
±75
±58
±53
±50
Short-Circuit Output Current
Output Shorted to Either Supply
100
Closed-Loop Output Impedance
G = +2, f ≤ 100kHz
0.2
UNITS
MHz
MHz
MHz
dB
V/µs
ns
ns
ns
dBc
dBc
dBc
dBc
nV/√Hz
pA/√Hz
%
°
%
%
Ω
Ω
%/°C
mV
µV/°C
µA
nA/°C
µA
nA/°C
V
V
kΩ || pF
kΩ || pF
V
V
V
V
mA
mA
Ω
MIN/
TEST
MAX LEVEL⁽³⁾
typ
C
min
B
min
B
typ
C
min
B
max
B
max
B
max
B
max
B
max
B
max
B
max
B
typ
C
typ
C
typ
C
typ
C
min
A
max
B
max
A
max
A
max
B
max
A
max
B
max
A
max
B
max
A
max
B
max
B
min
B
typ
C
typ
C
max
A
max
A
min
A
min
A
min
A
typ
C
typ
C
(1) Junction temperature = ambient for +25°C specifications.
(2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +5°C at high temperature limit for over
temperature specifications.
(3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
(4) Current is considered positive out of node.
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