LMH6654 Datasheet, PDF (5/17 Pages) National Semiconductor (TI) – Single/Dual Low Power, 250 MHz, Low Noise Amplifiers

5V Electrical Characteristics (Continued)
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Table.
Note 2: Human body model, 1.5kΩ in series with 100pF. Machine model: 0Ω in series with 100pF.
Note 3: Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature at 150˚C.
Note 4: The maximum power dissipation is a function of T_J(MAX), θ_JA and T_A. The maximum allowable power dissipation at any ambient temperature is P_D =
(T_J(MAX) − T_A)/θ_JA. All numbers apply for packages soldered directly onto a PC board.
Note 5: Typical Values represent the most likely parametric norm.
Note 6: All limits are guaranteed by testing or statistical analysis.
Note 7: Offset voltage average drift is determined by dividing the change in V_OS at temperature extremes into the total temperature change.
Note 8: Slew rate is the slower of the rising and falling slew rates. Slew rate is rate of change from 10% to 90% of output voltage step.
Typical Performance Characteristics T_J = 25˚C, V⁺ = ±5V, V^− = −5, R_F = 25Ω for gain = +1, R_F =
402Ω and for gain ≥ +2, and R_L = 100Ω, unless otherwise specified.
Closed Loop Bandwidth (G = +1)
Closed Loop Bandwidth (G = +2)
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Closed Loop Bandwidth (G = +5)
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Closed Loop Bandwidth (G = +10)
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