LMH6654 Datasheet, PDF (2/17 Pages) National Semiconductor (TI) – Single/Dual Low Power, 250 MHz, Low Noise Amplifiers

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance (Note 2)
Human Body Model
Machine Model
V_IN Differential
Output Short Circuit Duration
Supply Voltage (V⁺ − V^−)
Voltage at Input pins
Storage Temperature Range
Junction Temperature (Note 4)
2kV
200V
±1.2V
(Note 3)
13.2V
V⁺ +0.5V, V^− −0.5V
−65˚C to +150˚C
+150˚C
Soldering Information
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
235˚C
260˚C
Operating Ratings (Note 1)
Supply Voltage (V⁺ - V^−)
Junction Temperature Range
Thermal Resistance (θ_JA)
8-Pin SOIC
8-Pin MSOP
5-Pin SOT-23
±2.5V to ±6.0V
−40˚C to +85˚C
172˚C/W
235˚C/W
265˚C/W
±5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = +5V, V^− = −5V, V_CM = 0V, A_V = +1, R_F = 25Ω for gain =
+1, R_F = 402Ω for gain = ≥ +2, and R_L = 100Ω. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 6) (Note 5) (Note 6)
Dynamic Performance
f_CL
Close Loop Bandwidth
GBWP
φm
Gain Bandwidth Product
Bandwidth for 0.1dB Flatness
Phase Margin
A_V = +1
A_V = +2
A_V = +5
A_V = +10
A_V ≥ +5
A_V +1
250
130
MHz
52
26
260
MHz
18
MHz
50
deg
SR
Slew Rate (Note 8)
T_S
Settling Time
0.01%
A_V = +1, V_IN = 2V_PP
A_V = +1, 2V Step
200
V/µs
25
ns
0.1%
15
ns
t_r
Rise Time
t_f
Fall Time
Distortion and Noise Response
A_V = +1, 0.2V Step
A_V = +1, 0.2V Step
1.4
ns
1.2
ns
e_n
Input Referred Voltage Noise
i_n
Input-Referred Current Noise
Second Harmonic Distortion
Third Harmonic Distortion
X_t
Crosstalk (for LMH6655 only)
f ≥ 0.1 MHz
f ≥ 0.1 MHz
A_V = +1, f = 5MHz
V_O = 2V_PP, R_L = 100Ω
Input Referred, 5MHz,
Channel-to-Channel
4.5
nV/
1.7
pA/
−80
dBc
−85
−80
dB
DG
Differential Gain
DP
Differential Phase
Input Characteristics
V_OS
Input Offset Voltage
A_V = +2, NTSC, R_L = 150Ω
0.01
%
A_V = +2, NTSC, R_L = 150Ω
0.025
deg
V_CM = 0V
−3
±1
3
mV
−4
4
TC V_OS
I_B
Input Offset Average Drift
Input Bias Current
V_CM = 0V (Note 7)
V_CM = 0V
6
µV/˚C
5
12
µA
18
I_OS
Input Offset Current
V_CM = 0V
−1
0.3
1
µA
−2
2
R_IN
Input Resistance
Common- Mode
Differential Mode
4
MΩ
20
kΩ
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