LMH6654 Datasheet, PDF (3/17 Pages) National Semiconductor (TI) – Single/Dual Low Power, 250 MHz, Low Noise Amplifiers

±5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = +5V, V^− = −5V, V_CM = 0V, A_V = +1, R_F = 25Ω for gain =
+1, R_F = 402Ω for gain = ≥ +2, and R_L = 100Ω. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 6) (Note 5) (Note 6)
C_IN
Input Capacitance
Common- Mode
Differential Mode
1.8
pF
1
CMRR Common Mode Rejection Ration
Input Referred,
70
90
dB
CMVR
V_CM = 0V to −5V
Input Common- Mode Voltage Range CMRR ≥ 50dB
68
−5.15
−5.0
V
3.5
3.7
Transfer Characteristics
A_VOL
Large Signal Voltage Gain
V_O = 4V_PP, R_L = 100Ω
60
67
dB
58
Output Characteristics
V_O
Output Swing High
No Load
3.4
3.6
3.2
Output Swing Low
No Load
−3.9
−3.7
V
−3.5
Output Swing High
R_L = 100Ω
3.2
3.4
3.0
Output Swing Low
R_L = 100Ω
−3.6
−3.4
−3.2
I_SC
Short Circuit Current (Note 3)
Sourcing, V_O = 0V
145
280
∆V_IN = 200mV
130
mA
Sinking, V_O = 0V
100
185
∆V_IN = 200mV
80
I_OUT
Output Current
Sourcing, V_O = +3V
Sinking, V_O = −3V
80
mA
120
R_O
Output Resistance
A_V = +1, f <100kHz
0.08
Ω
Power Supply
PSRR
I_S
Power Supply Rejection Ratio
Supply Current (per channel)
Input Referred ,
V_S = ±5V to ±6V
60
76
dB
4.5
6
mA
7
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = +5V, V^− = −0V, V_CM = 2.5V, A_V = +1, R_F = 25Ω for gain
= +1, R_F = 402Ω for gain = ≥ +2, and R_L = 100Ω to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(Note 6) (Note 5) (Note 6)
Dynamic Performance
f_CL
Close Loop Bandwidth
GBWP
φm
SR
T_S
Gain Bandwidth Product
Bandwidth for 0.1dB Flatness
Phase Margin
Slew Rate (Note 8)
Settling Time
0.01%
A_V = +1
A_V = +2
A_V = +5
A_V = +10
A_V ≥ +5
A_V = +1
A_V = +1, V_IN = 2V_PP
A_V = +1, 2V Step
230
120
MHz
50
25
250
MHz
17
MHz
48
deg
190
V/µs
30
ns
0.1%
20
ns
3
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