CD4023BM Datasheet, PDF (4/6 Pages) National Semiconductor (TI) – Buffered Triple 3-Input NAND,NOR Gate

AC Electrical Characteristics T_A e 25 C C_L e 50 pF R_L e 200k unless otherwise specified
Symbol
Parameter
Conditions
CD4023BC
CD4023BM
CD4025BC
CD4025BM
Units
Min Typ Max Min Typ Max
t_PHL
Propagation Delay High-to-Low Level
V_DD e 5V
V_DD e 10V
V_DD e 15V
130 250
60 100
40 70
130 250 ns
60 100 ns
40 70
ns
t_PLH
Propagation Delay Low-to-High Level
V_DD e 5V
V_DD e 10V
V_DD e 15V
110 250
50 100
35 70
120 250 ns
60 100 ns
40 70
ns
t_THL
t_TLH
Transition Time
V_DD e 5V
V_DD e 10V
V_DD e 15V
90 200
50 100
40 80
90 200 ns
50 100 ns
40 80
ns
C_IN
Average Input Capacitance
Any Input
5
75
5
75
pF
C_PD
Power Dissipation Capacity (Note 4) Any Gate
17
17
pF
AC Parameters are guaranteed by DC correlated testing
Note 4 C_PD determines the no load AC power consumption of any CMOS device For complete explanation see 54C 74C Family Characteristics Application
Note AN-90
4