MNCLC501A-X Datasheet, PDF (3/14 Pages) National Semiconductor (TI) – HIGH-SPEED OUTPUT CLAMPING OP AMP

MNCLC501A-X REV 0A0
MICROCIRCUIT DATA SHEET
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage (Vs)
Output Current (Iout)
Junction Temperature (Tj)
Storage Temperature
Lead Temperature (soldering, 10 seconds)
Power Dissipation (Pd)
(Note 2)
Common Mode Input Voltage (Vcm)
Thermal Resistance
ThetaJA (Junction to Ambient)
CERAMIC DIP (Still Air)
(500LFPM)
SOIC
(Still Air)
(500LFPM)
ThetaJC (Juntion to Case)
CERAMIC DIP
SOIC
Package Weight
(Typical)
CERAMIC DIP
SOIC
ESD Tolerance
(Note 3)
ESD Rating
+7V dc
70mA
+175 C
-65 C to +150 C
+300 C
TBD
Vs
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
<1000V
Note 1:
Note 2:
Note 3:
Absolute Maximum Ratings are limits beyond which damage to the device may occur.
Operating Ratings are conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Human body model, 100pF discharged through 1.5K Ohms.
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