LMC660EP Datasheet, PDF (3/15 Pages) National Semiconductor (TI) – CMOS Quad Operational Amplifier

Absolute Maximum Ratings (Note 6)
If Military/Aerospace specified devices are required,
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Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage
Output Short Circuit to V⁺
Output Short Circuit to V^−
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Voltage at Input/Output Pins
Current at Output Pin
Current at Input Pin
±Supply Voltage
16V
(Note 14)
(Note 4)
260˚C
−65˚C to +150˚C
(V⁺) + 0.3V, (V^−) − 0.3V
±18 mA
±5 mA
Current at Power Supply Pin
Power Dissipation
Junction Temperature
ESD tolerance (Note 11)
35 mA
(Note 5)
150˚C
1000V
Operating Ratings
Temperature Range
LMC660EP
Supply Voltage Range
−40˚C ≤ T_J ≤ +85˚C
4.75V to 15.5V
Power Dissipation
(Note 12)
Thermal Resistance (θ_JA) (Note 13)
14-Pin Molded DIP
85˚C/W
14-Pin SO
115˚C/W
DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for T_J = 25˚C. Boldface
limits apply at the temperature extremes. V⁺ = 5V, V^− = 0V, V_CM = 1.5V, V_O = 2.5V and R_L > 1M unless otherwise specified.
(Note 15)
Parameter
Input Offset
Voltage
Input Offset
Voltage
Average Drift
Input Bias Current
Input Offset Current
Input Resistance
Common Mode
Rejection Ratio
Positive Power
Supply
Rejection Ratio
Negative Power
Supply
Rejection Ratio
Input
Common-Mode
Voltage Range
Large Signal
Voltage Gain
Conditions
0V ≤ V_CM ≤
12.0V
V⁺ = 15V
5V ≤ V⁺ ≤ 15V
V_O = 2.5V
0V ≤ V^− ≤ −10V
V⁺ = 5V & 15V
For CMRR ≥ 50
dB
R_L = 2 kΩ (Note
8)
Sourcing
Sinking
Typ
(Note
7)
1
1.3
0.002
0.001
>1
83
83
94
−0.4
V⁺ −
1.9
2000
500
Limit
(Note 7)
3
3.3
4
2
70
68
70
68
84
83
−0.1
0
V⁺ − 2.3
V⁺ − 2.5
440
400
180
120
Units
mV
max
µV/˚C
pA
max
pA
max
TeraΩ
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
3
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