LM363 Datasheet, PDF (3/22 Pages) National Semiconductor (TI) – LM363 Precision Instrumentation Amplifier

LM363 Electrical Characteristics (Continued) (Notes 1 and 2)
LM363
Parameter
Conditions
Tested
Typ
Limit
Design
Limit
Units
(Note 3)
(Note 4)
Common-Mode Rejection
Ratio (b10V^sV_CM^s10V)
Ge1000 500
Ge100
Ge10
130
114
120
94
105
90
104
dB
84
dB
80
dB
Positive Supply Rejection
Ratio (5V to 15V)
Ge1000 500
Ge100
Ge10
130
110
120
100
100
85
100
dB
95
dB
78
dB
Negative Supply Rejection
Ratio (b5V to b15V)
Ge1000 500
Ge100
Ge10
120
100
106
85
86
70
90
dB
75
dB
60
dB
Input Bias Current
2
10
20
nA
Input Offset Current
1
3
5
nA
Common-Mode Input
Resistance
100
8
GX
Differential Mode Input
Ge1000 500
02
GX
Resistance
Ge100
2
GX
Ge10
20
GX
Input Offset Current Change
b11VsV_CMs13V
20
100
Reference and Sense
Resistance
Min
Max
50
30
80
300
27
83
pa V
kX
kX
kX
Open Loop Gain
G_CLe1000 500
10
1
V mV
Supply Current
Positive
Negative
12
24
16
28
30
mA
34
mA
Note 1 These conditions apply unless otherwise noted V^a e15V V^beb15V V_CMe0V R_Le2 kX reference pin grounded sense pin connected to output and
T_je25 C
Note 2 Boldface limits are guaranteed over full temperature range Operating ambient temperature range is 0 C to 70 C for the LM363
Note 3 Guaranteed and 100% production tested
Note 4 Guaranteed but not 100% tested These limits are not used in determining outgoing quality levels
Note 5 Maximum rated junction temperature is 100 C for the LM363 Thermal resistance junction to ambient is 150 C W for the TO-99(H) package and 100 C W
for the ceramic DIP (D)
3