DS90C031 Datasheet, PDF (3/14 Pages) National Semiconductor (TI) – LVDS Quad CMOS Differential Line Driver

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_CC)
−0.3V to +6V
Input Voltage (D_IN)
−0.3V to (V_CC + 0.3V)
Enable Input Voltage (EN, EN*)
−0.3V to (V_CC + 0.3V)
Output Voltage (D_OUT+, D_OUT−)
−0.3V to (V_CC + 0.3V)
Short Circuit Duration
(D_OUT+, D_OUT−)
Continuous
Maximum Package Power Dissipation @ +25˚C
M Package
1068 mW
E Package
1900 mW
Derate M Package
8.5 mW/˚C above +25˚C
Derate E Package
12.8 mW/˚C above +25˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range
Soldering (4 sec.)
+260˚C
Maximum Junction Temperature
(DS90C031T)
Maximum Junction Temperature
(DS90C031E)
ESD Rating (Note 7)
(HBM, 1.5 kΩ, 100 pF)
(EIAJ, 0 Ω, 200 pF)
Recommended Operating
Conditions
Min Typ
Supply Voltage (V_CC)
+4.5 +5.0
Operating Free Air Temperature (T_A)
DS90C031T
−40 +25
DS90C031E
−55 +25
+150˚C
+175˚C
≥ 3,500V
≥ 250V
Max
+5.5
Units
V
+85
˚C
+125
˚C
Electrical Characteristics
Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 2, 3)
Symbol
Parameter
Conditions
Pin
V_OD1
∆V_OD1
Differential Output Voltage
Change in Magnitude of V_OD1
for Complementary Output
States
R_L = 100Ω (Figure 1)
D_OUT−,
D_OUT+
V_OS
∆V_OS
Offset Voltage
Change in Magnitude of V_OS for
Complementary Output States
V_OH
Output Voltage High
V_OL
Output Voltage Low
V_IH
Input Voltage High
V_IL
Input Voltage Low
I_I
Input Current
V_CL
Input Clamp Voltage
I_OS
Output Short Circuit Current
I_OZ
Output TRI-STATE Current
I_CC
No Load Supply Current
Drivers Enabled
I_CCL
Loaded Supply Current
Drivers Enabled
R_L = 100Ω
V_IN = V_CC, GND, 2.5V or 0.4V
I_CL = −18 mA
V_OUT = 0V (Note 8)
EN = 0.8V and EN* = 2.0V,
V_OUT = 0V or V_CC
D_IN = V_CC or GND
DS90C031T
D_IN = 2.5V or 0.4V
R_L = 100Ω All Channels
V_IN = V_CC or GND
(all inputs)
DS90C031T
DS90C031E
D_IN,
EN,
EN*
D_OUT−,
D_OUT+
V_CC
I_CCZ
No Load Supply Current
Drivers Disabled
D_IN = V_CC or GND
EN = GND, EN* = V_CC
DS90C031T
DS90C031E
Min
250
1.125
0.90
2.0
GND
−10
−1.5
−10
Typ
345
4
1.25
5
1.41
1.07
±1
−0.8
−3.5
±1
1.7
4.0
15.4
15.4
2.2
2.2
Max Units
450 mV
35 |mV|
1.375 V
25 |mV|
1.60 V
V
V_CC
V
0.8
V
+10 µA
V
−5.0 mA
+10 µA
3.0 mA
6.5 mA
21.0 mA
25.0 mA
4.0 mA
10.0 mA
Switching Characteristics
V_CC = +5.0V, T_A = +25˚C DS90C031T. (Notes 3, 4, 6, 9)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
t_PHLD
Differential Propagation Delay High to Low
R_L = 100Ω, C_L = 5 pF
1.0
2.0
3.0
ns
t_PLHD
Differential Propagation Delay Low to High
(Figure 2 and Figure 3)
1.0
2.1
3.0
ns
t_SKD
Differential Skew |t_PHLD – t_PLHD|
0
80
400
ps
t_SK1
Channel-to-Channel Skew (Note 4)
0
300
600
ps
3
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