THS4509 Datasheet, PDF (20/42 Pages) Texas Instruments – WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER

THS4509
SLOS454H – JANUARY 2005 – REVISED NOVEMBER 2009
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TYPICAL CHARACTERISTICS: V_S+ – V_S– = 3 V (continued)
Test conditions at V_S+ = +1.5 V, V_S– = –1.5 V, CM = open, V_OD = 1 V_PP, R_F = 349 Ω, R_L = 200-Ω differential, G = 10 dB,
single-ended input, and input and output referenced to midrail, unless otherwise noted.
IMD₂ vs FREQUENCY
−30
Gain = 14 dB,
−40 ^VOD ^{= 1 V}PP ^Envelope
R_L = 500 W
IMD₃ vs FREQUENCY
−30
Gain = 14 dB,
−40 ^{VOD = 1 VPP Envelope}
−50
−50
R_L = 100 W
−60
R_L = 100 W
−70
−80
R_L = 1 kW
R_L = 200 W
−90
−100
0
50
100
150
200
f − Frequency − MHz
Figure 56.
−60
R_L = 500 W
−70
−80
−90
R_L = 1 kW
R_L = 200 W
−100
0
50
100
150
200
f − Frequency − MHz
Figure 57.
OIP₂, dBm vs FREQUENCY
80
Gain = 6 dB
75
70
65
60
Gain = 10 dB
55
50
Gain = 14 dB
45
40
35
30
0
50
100
150
200
f − Frequency − MHz
Figure 58.
OIP₃, dBm vs FREQUENCY
45
Gain = 6 dB
40
Gain = 10 dB
35
30
25
Gain = 14 dB
20
15
0
50
100
150
200
250
f − Frequency − MHz
Figure 59.
0.1-dB FLATNESS
10.2
V_OD = 1 V_PP
10.1
10
9.9
9.8
0.1
1
10
100
1000 10000
f − Frequency − MHz
Figure 60.
S-PARAMETERS vs FREQUENCY
0
S21
-10
-20
S11
-30
-40 _S22
-50
-60
S12
-70
1
10
100
f = Frequency - MHz
Figure 61.
1000
20
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