THS4509 Datasheet, PDF (2/42 Pages) Texas Instruments – WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER

THS4509
SLOS454H – JANUARY 2005 – REVISED NOVEMBER 2009
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGING/ORDERING INFORMATION⁽¹⁾
TEMPERATURE
PACKAGED DEVICES
QUAD QFN^{(2) (3)}
(RGT-16)
SYMBOL
THS4509RGTT
–40°C to +85°C
—
THS4509RGTR
(1) For the most current package and ordering information see the Package Option Addendum at the end
of this document, or see the TI web site at www.ti.com.
(2) This package is available taped and reeled. The R suffix standard quantity is 3000. The T suffix
standard quantity is 250.
(3) The exposed thermal pad is electrically isolated from all other pins.
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Over operating free-air temperature range, unless otherwise noted.
V_S– to V_S+
V_I
V_ID
I_O
T_J
T_A
T_stg
Supply voltage
Input voltage
Differential input voltage
Output current⁽²⁾
Continuous power dissipation
Maximum junction temperature
Operating free-air temperature range
Storage temperature range
HBM
ESD ratings
CDM
MM
UNIT
6V
±V_S
4V
200 mA
See Dissipation Rating Table
+150°C
–40°C to +85°C
–65°C to +150°C
2000 V
1500 V
100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The THS4509 incorporates a (QFN) exposed thermal pad on the underside of the chip. This pad acts as a heatsink and must be
connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about
using the QFN thermally-enhanced package.
DISSIPATION RATINGS TABLE
PACKAGE
RGT (16)
θ_JC
2.4°C/W
θ_JA
39.5°C/W
POWER RATING
T_A ≤ +25°C
2.3 W
T_A = +85°C
225 mW
2
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