THS4011 Datasheet, PDF (2/36 Pages) Texas Instruments – 290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS

THS4011
THS4012
SLOS216E – JUNE 1999 – REVISED APRIL 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
DISTORTION
vs
FREQUENCY
−40
V_CC = ±15 V
−50 ^RL ^{= 150 Ω}
G=2
−60
2nd Harmonic
−70
−80
−90
−100
3rd Harmonic
−110
100k
1M
10M
f − Frequency − Hz
T_A
0°C to
70°C
–40°C to
85°C
–55°C to
125°C
NUMBER OF
CHANNELS
1
2
1
2
1
AVAILABLE OPTIONS
PACKAGED DEVICES⁽¹⁾
PLASTIC SMALL PLASTIC MSOP⁽²⁾
OUTLINE⁽²⁾ (D)
(DGN)
MSOP
SYMBOL
PACKAGED DEVICES
CERAMIC DIP
(JG)
CHIP CARRIER
(FK)
THS4011CD
THS4011CDGN
TIACI
—
—
THS4012CD
THS4012CDGN ⁽³⁾
TIABY
—
—
THS4011ID
THS4011DGN
TIACJ
—
—
THS4012ID
THS4012IDGN ⁽³⁾
TIABZ
—
—
—
—
—
THS4011MJG
THS4011MFK
EVALUATION
MODULE
THS4011EVM
THS4012EVM
—
—
—
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(2) The D and DGN packages are available taped and reeled. Add an R suffix to the device type (i.e., THS4011CDGNR).
(3) This device is in the Product Preview stage of development. Please contact your local TI sales office for availability.
2
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Product Folder Link(s): THS4011 THS4012