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PIP202-12M-2 Datasheet, PDF (12/20 Pages) NXP Semiconductors – DC-to-DC converter powertrain
Philips Semiconductors
PIP202-12M-2
DC-to-DC converter powertrain
thermal resistance of this package, the printed-circuit board must be designed so that
heat is conducted away efficiently from the package. This can be achieved by
maximizing the area of copper around each pad, and by incorporating thermal vias to
conduct the heat to inner and/or bottom layers of the printed-circuit board.
An example of a thermal via pattern is shown in Figure 13. In a typical application,
with no forced air cooling, the use of thermal vias typically reduces the thermal
resistance from 25 K/W to 20 K/W. The additional use of a small fan can reduce this
further to approximately 15 K/W.
PAD1
PAD2
PAD3
03ag36
All holes 0.5 mm diameter with 1 mm spacing.
Fig 13. Printed-circuit board thermal via pattern.
The thermal resistance of a particular design can be measured by passing a known
current between VSSO and VDDO. The current flows through the Schottky diode and
through the source-drain diode of the upper MOSFET. The direction of current flow is
into VSSO and out of VDDO. The volt drop between VSSO and VDDO is then measured
and used to calculate the power dissipation in the PIP202-12M. The case
temperature of the PIP202-12M can be measured using an infra-red thermometer.
The thermal resistance can then be calculated using the following equation:
Rth( j – pcb) = T-----c--a-I-s---e×---–--V---T-F---a--m----b(K ⁄ W )
(3)
where Tcase is the measured case temperature (°C), Tamb is the ambient
temperature (°C), I is the MOSFET current (A), and VF is the voltage drop between
VSSO and VDDO (V).
Where more than one phase is used, for example the circuit of Figure 11, the thermal
resistance of each PIP202-12M should be measured with current flowing in all
phases.
9397 750 11943
Product data
Rev. 02 — 24 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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