LP3929 Datasheet, PDF (1/12 Pages) National Semiconductor (TI) – High Speed Bi-Directional Level Shifter and Ultra Low-Dropout CMOS Voltage Regulator and Line

July 2006
LP3929
High Speed Bi-Directional Level Shifter and Ultra
Low-Dropout CMOS Voltage Regulator and Line
Protection
General Description
The LP3929 is designed for portable and wireless applica-
tions requiring level translation and power supply generation
in a compact footprint.
The device level translates 1.8 V LVCMOS on the host (A)
side to 2.85 V LVCMOS levels on the card (B) side for a
miniSD / SD 4-bit bi-directional data bus.
Independent direct control of the CMD, Data0 and Data1-3
paths support mini SD state machine requirements. A shut-
down pin is provided for the level shifters and regulator. The
f_CLK_A is a feedback clock to the host which can be used
to overcome level shifter bus delay.
The built-in low-dropout voltage regulator is ideal for mobile
phone and battery powered wireless applications. It provides
up to 200 mA from a 3.05 V to 5.5 V input. It is stable with
small 1.0 µF ±30% ceramic and high quality tantalum output
capacitors, requiring smallest possible PC board area.
The card (B port) side channels have integration of ASIP
(Application Specific Integrated Passives) - on chip inte-
grated pull-up, pull-down, series resistors and capacitors for
EMC filtering. It is designed to tolerate IEC61000-4-2 level 4
ESD: ±15 kV air discharge, ±8 kV direct contact.
Key Specifications
Level Shifter:
n 6-signal Level Shifter (5 bi-directional and 1
uni-direction)
n 3 ns (typ) propagation delay
n Channel-to-channel skew < 1 ns (max)
Low-Dropout Regulator:
n 3.05 V to 5.5 V input range
n 2.85 V at 200 mA
n Fast Turn-On time: 30 µs (typ)
n 110 mV (max) dropout with 200 mA load
n Thermal shutdown at 160˚C (typ)
Protection Block (B Side):
n Robust IEC ESD Protection: ±15 kV Air Gap, ±8 kV
Direct Contact
n ASIP / EMI Filtering
Features
n Ultra small micro SMD 24 bump package
n 6-signal level translation 1.8 V to 2.85 V
n LDO stable with ceramic and high quality tantalum
capacitors
Typical Application Circuit
© 2006 National Semiconductor Corporation DS201868
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