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MRF21010LR1 Datasheet, PDF (4/4 Pages) New Jersey Semi-Conductor Products, Inc. – RF Power Field Effect Transistors
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LU PLANE
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NSULATOR)
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NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PERASMEY14.5M-1994.
2. CONTROLLING DIMENSION: INCH,
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY
INCHES
DIM HIN MAX
A 0.795 0.806
B 0.225 0.23S
C 0.125 0.175
D 0.210 0.220
E 0.055 0.066
F 0.004 0.006
G
0.562 BSC
H 0.077 0.087
K 0.220 0.250
M 0.355 0.365
N 0.357 0.363
0 0.125 0.135
R 0.227 0.233
S 0.225 0.235
aaa 0.005 REF
bbb 0.01 OREF
ccc 0.015 REF
MILLIMETERS
MIN MAX
20.19 20.45
6.72
5.97
3.18
4.45
5.33
5.59
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
5.59
6.35
9.02
9.27
9.07
9.22
3.18
3.43
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE):
PIN1. DRAIN
2. GATE
3. SOURCE
CASE360B-05
ISSUE F
NI-360
MRF21010LR1
(FLANGE!
U^ 21
(FLANGE)
2X D
fbbb®|T|
(LID)
CCC® T A i
PIN3
(INSULATOR)
bbb® T
l SEATING
PLANE
R
(LID)
T A ® B®
aaa @ | T | A ® [ B ® |
360C-05
ISSUE D
NI-360S
MRF21010LSR1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PERASMEY14.5U-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0 762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.375 0.385
B 0.225 0.235
C 0.105 0.155
0 0.210 0.220
E 0.035 0.045
F 0.004 0.006
H 0.057 0.067
K 0.085 0.115
M 0.355 0.365
N 0.357 0.363
R 0.227 0.23
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN1. DRAIN
2 GATE
3. SOURCE
MILLIMETERS
MIN MAX
9.53
9.78
5.72
5.97
2-67
3.94
5.33
5,59
0.89
1.14
0.10
0.15
1.45
1.70
2.16
2.92
9.02
9.27
9.07
9.22
5.77
5.92
5.72
5.97
0.1 3 REF
0.25 REF
0.38 REF