MRF21010LR1 Datasheet, PDF (3/4 Pages) New Jersey Semi-Conductor Products, Inc. – RF Power Field Effect Transistors

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain -Source Breakdown Voltage
(VGS = 0 Vdc, ID =10 nA)
V(BR)DSS
Zero Gate Voltage Drain Current
bss
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate -Source Leakage Current
'GSS
(VGS = 5 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS=10V, !D = 50u:A)
vGS(th)
Gate Quiescent Voltage
(VDS = 28 V, ID = 1 00 mA)
Drain -Source On -Voltage
(VGS= 10V, ID = 0.5 A)
Forward Transconductance
(VDS=10V, ID = 1 A)
VGS(Q)
VDS(on)
9fs
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
Crss
(VDS = 28 Vdc, VQS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Two-Tone Common Source Amplifier Power Gain
Gps
(VDD = 28 Vdc, Pou, = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Two-Tone Drain Efficiency
11
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 =2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pou, = 10 W PEP, IDQ = 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Input Return Loss
(VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA,
f1 =2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Output Power, 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz)
IMD
IRL
P1dB
Common -Source Amplifier Power Gain
Gps
(VDD = 28 Vdc. pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz)
Drain Efficiency
11
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 21 70 MHz)
Output Mismatch Stress
V
(VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA,
f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Min
Typ
Max
Unit
65
—
—
—
—
—
—
Vdc
10
uAdc
1
uAdc
2.5
3
2.5
4
—
0.4
—
0.95
4
Vdc
4.5
Vdc
0.5
Vdc
—
S
—
1
—
PF
12
13.5
dB
31
35
%
-35
-30
dBc
-12
-10
dB
—
11
—
W
12
dB
42
%
No Degradation In Output Power
Before and After Test