MRF21010LR1 Datasheet, PDF (1/4 Pages) New Jersey Semi-Conductor Products, Inc. – RF Power Field Effect Transistors

<£e.mi-Conclu<2koi ^Product*,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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The RF MOSFET Line
RF Power Field Effect Transistors
MRF21010LR1
MRF21010LSR1
N- Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications.
. Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
. Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,
10 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40|j" Nominal.
2170MHz, 10 W, 28V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05,
NI-360
MRF21010LR1
CASE 360C-05,
NI-360S
MRF21010LSR1
MAXIMUM RATINGS
Drain -Source Voltage
Rating
Gate -Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg .
Tj
Symbol
Rejc
Value
65
- 0.5, +15
43.75
0.25
- 65 to +150
200
Max
5.5
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
W
w/°c
°c
"C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonableprecautionsin handling and
packaging MOS devices should be observed.