BUK552 Datasheet, PDF (4/4 Pages) New Jersey Semi-Conductor Products, Inc. – PowerMOS transistor Logic level FET

PowerMOS transistor
Logic level FET
-n ID/A
/
/-
T//C
/
/
:_//z_//5/,/_'
/
'
/
^₁'_hll ...
//
//
//L_
/
/
//
/ ^{7/ 7}
^* _i^s_/^///
0
2
4
6
8
VGS/V
Fig. 7. Typical transfer characteristics.
lD = f(VGS) ^{; conditions: VDS = 25 V; parameter Tt}
gfs/S
^--
X
/
L/
f
/^f
/
i
I
— ^{--, ~~,•~-} _-^,
~^ ~-~,
"X_s
0 2 4 6 B 10 12 14 16 18 20
ID / A
Fig. 8. Typical transconductance, T, = 25 'C.
9* = Wo); conditions: VDS = 25V
a
Normalised RDS(ON) = 1(Tj)
/
i s ^{/ / />/ //}
^~- ^{_—• ^,^ ^^ ^}
0.4
-60
-20
20
60
100
140
180
Tjl °C
Fig. 9. Normalised drain-source on-state resistance.
a = f^os(ON/^DS(QN)2s 'c= f(Tj); ID = 5.5A; VGS = 5V
BUK552-100A/B
VGS(TO)/V
"•*- _=^,
~"~-- -~_^
max.
^^
' _{"--. ^}
^^ •^—
— -,
~-~-
typ.
"-- -,— __
-•-..
•--,
""-- '^^
•~~~. ^{~-~^_^}
min.
~~~--
"~^ _-~-^
•—
~^- _{"~--..~—}
._
-60
-20
20
60
100
140
780
Tj/ "C
Fig. 10. Gate threshold voltage.
VGSITO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
ID/t \
1E-01
1E-02 i=l
1E-03
1E-04 -
5UB- THR -.SH(-)LD CONDUG noN
=
gs ^{^_l_}
-/-
^
Lj
^
1
r_'yy= 2%
ty
^!_8% ^•-/--
j
/
1
IE-OS -
L= _=lm
^ ⁱ
/
/
0
0.4
0.8
1.2
1,6
2
2A
VGS/V
Fig. 11. Sub-threshold drain current.
ID - f(VGs>; conditions: Tt = 25 °C; VDS = VGS
C/pF
WOOOi
1000
$-~—
100- ^{\—^^}
— Ciss
-— ,
' —_ _•—
— Coss
-— _Cres
0
20
40
VDS/V
Fig. 12. Typical capacitances, Ciss, Coss, Cres.
C = f(VDS); conditions: VBS = 0 V; f= 1 MHz