BUK552 Datasheet, PDF (3/4 Pages) New Jersey Semi-Conductor Products, Inc. – PowerMOS transistor Logic level FET

PowerMOS transistor
Logic level FET
Jnn PD%
Normalised Power Derating
s_s
80 -
X _s,Nk,
S
\
50 -
40
s
V|v
ss
10
s_ss
0 20 40 60 SO 100 120 140 160 180
Tmb / °C
Fig-1. ^{Normalised power dissipation.}
ID%
Normalised Current Derating
•*• _K.
•v _•s
V,
S,
V,
X _ss
S\
1
0 20 40 60 80 100 120 140 160 180
Tmb / °C
Fig.2. Normalised continuous drain current.
ID% = 100-lo/lox c = f(Tmb); conditions: VGS>5V
I D / / \I
100-
10-
1-
n-- —i—
-^i^.A
§
_. —,
tp=1 -' jfy { B \
S^
10 u;
f_:!: _i^ N
^ ^{-! ^00 us}
\ _^,
^; ^{^}
,
"" DC
^
s
1
TO
100
VDS/V
Fig.3. Safe operating area. Tmb = 25 °C
ID & IDM = f(VDs); IDM single pulse; parameter tp
BUK552-100A/B
Zth j-mb / (K/W)
1E+01
1E-02
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
, = W); parameter D = t/T
ID /A
VUti / v =
1_s0 ^ ,^{-^----^ ,—}f ^=— _a
^. _"^L.
——
10
Ss''^///j--'^{^*~ ?=•}
/_'/_/^. _/
'/ //
4
//,/
W>
ys
r*^
ft
w^W'
7
-^
3
f^
0 -I^£.
(->
2
4
6
VDS/V
8
10
Fig. 5 T>pical output characteristics, 7~ = 25 'C.
ID = f(VDS); parameter VGS
RDS(ON)/Ohm
'-
1. 5
4
r
V 3S/\ ^{/ —}
5
5
s
sS
,---
—-^{**• J}
:= = Z₌ = _^^= ^{=^ \ss b—}
)
1
/
7
/
>
—• ^{^* ^-- ^-*}
-^
^-~ ^{*-~" ^sr-*" ^11}
b= =
r— t—-
0 ₍₎
Fig.t ^\
2 4 6 8 10 12 14 16 18 20
ID /A
Typical on-state resistance, Tj = 25 °C.
Rostov = Wo); parameter VGS