BUK552 Datasheet, PDF (2/4 Pages) New Jersey Semi-Conductor Products, Inc. – PowerMOS transistor Logic level FET

PowerMOS transistor
Logic level FET
BUK552-100A7B
STATIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VOS = OV; ID = 0.25mA
VDS = Vcs; ID = 1 mA
VDS = 100 V; VGS = 0 V; J. = 25 "C
VDS=100V;VGS = OV;T^125-C
VGS = ±15V;VDS = OV
VGS = 5V;
BUK552-100A
ID = 5.5 A
BUK552-100B
MIN.
100
1.0
TYP.
1.5
1
0.1
10
0.25
0.3
MAX.
2.0
10
1.0
100
0.28
0.35
UNIT
V
V
^A
mA
nA
Q
ii
DYNAMIC CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
gfa
Forward transconductance
ciss
Input capacitance
Coss
Output capacitance
crss
Feedback capacitance
*don
Turn-on delay time
t,
Turn-on rise time
tdoff
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 5.5 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 Q;
Rgen = 50 Q
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN. TYP. MAX. UNIT
4.5
6
-
S
~
400 600 _PF
90 120 PF
35
50
PF
12
18
ns
45
70
ns
-
50
70
ns
30
45
ns
3.5
nH
4.5
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
'DR
Continuous reverse drain
current
'DRM
Pulsed reverse drain current
VSD
Diode forward voltage
IP =10 A; VGS = OV
trr
Reverse recovery time
lF=10A;-dlF/dt=100A/^is;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 °C unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
undamped inductive turn-off
energy
CONDITIONS
ID = 1 0 A ; V D D < 5 0 V ;
VGS = 5 V ; RGS = 50 Q
MIN. TYP. MAX. UNIT
10
A
-
40
A
1.2 1.5
V
90
ns
-
0.35
-
HC
MIN. TYP. MAX. UNIT
~
~
30 mJ