MJE2100 Datasheet, PDF (3/3 Pages) New Jersey Semi-Conductor Products, Inc. – PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

MJE1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued)
MJE2090 thru MJE2093 PNP/MJE2100 thru MJE2103 NPN
MJE 1090
MJE 1091
MJE 1O92
MJE 1093
MJE 1100
MJC 1101
MJE 1 1O2
MJE 1 103
--a- _,F
-*- _{U r*}
0
^ _{t "}I
iV i
II ^IH
—•_HGH1^
M
\
K,
4
^³
STYLE 2:
PIN 1. EMITTER
!. COLLECTOR
3. BASE
MILLIN ETERS
INCHES
DIM MIN MAX MIN MAX
A 16.13 1638 0.635 0.645
1257 12.83 0.495 0.505
C
J.I8 3.43
D 1.09 124 0.043 0.049
F 3 5 1 3.76 0.138 0.148
r,
• ? BSC
0.18 BSC
H 2.67 2.92 0.105 0.115
j
0.913 0864 O.OJ5 0.034
K 15 11 1638 0.595 O.M5
M
9°
9"
'R~ "V.«Tl 2.16 0.075 0085
u b.« t.« a.in o.ns
«OTE
1 LEADS WITHIN 005" RAO QF TR UE
POSITION (TPIATMMC
CASE 90-05
MJE2090
MJE 2091
MJE 2092
MJE2093
MJE 2 100
MJE21O1
MJE21D2
MJE21O3
— B—
(1
~%&)!F
T
t
A
M
- ^{^T}
t
jt K """ —S
_i
D
—J
L_{—it— rR}
QLT~
^^^-f
STYLE 1
PIM BASE
2 COLLECTOR
3 EMITTER
MILLIMETERS INCHES
DIM MIN MAX MlN MAX
A 16.08 1633 0.633 0.643
B 12.57 12.83 0.495 0.50S
f _{3 18} 343 _{0125 0 135}
D 0.51 0.76 0.020 0.030
f 3.61 3.86 0.142 0.152
B
2.54 bst
U 10 BSC
H 2.67 2.92 0.10S 0.115
J 0.43 0.89 0.017 0.027
K 14.73 14.93 0.580 0.590
L 216 2.41
M 3« w
0.085 0.096
3° TYP
t 4? 1 73 QQM Q06B
^-§~ _4.78 5.03 _0.1
R 1.91
s 0.81
T S.99
o.oaj ^{2.16 0.11 7*5 0.085}
U.Oti
6.034
7.24 0.275 0.285
U 6.22 6.48 0.245 d.»5
1. QIM "G" IS TO CENTER LINE OF LEADS.
CASE 199-04