MJE2100 Datasheet, PDF (2/3 Pages) New Jersey Semi-Conductor Products, Inc. – PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

MJE1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued)
MJE2090thru MJE2093 PNP/MJE2100 thru MJE2103 NPN
ELECTRICAL CHARACTERISTICS ITC ' 35°C unim oth«w» noted)
ChtracwMIe
I Symbol
Min
Off CHARACTERISTICS
Colkctor-Erninv Brwkdown Volu«t«l
BVCE0
(lc- 100 mAdc, IB -01
MJE1090, MJE1091, MJE1100. MJE1101
60
MJE2090, MJE2091, MJE 2100. MJE2101
60
MJE1092, MJE1093, MJ61102. MJE1103
80
MJE2092, MJE2093, MJE2102, MJE2103
60
ColtKtOr Cutoff Current
IVCe-30V<fc. IB ' 0)
(VCE -40 Vdc, iB - ov
'CEO
MJE 1090, MJE1091.MJE 1100, MJE1101
-
MJE2090, MJE2091, MJE2100, MJB2101
MJE 1093, MJE 1093. MJE 1102, WUEIIOS
-
MJE 2092, MJE2093. MJ62102. MJE2103
Coll*cwr Cutoff Currant
(VCB - R*Ud BVCEQ. >E ' 0'
<V£p - Rlttd BVnEO, l£ " 0, TC - IOO°C)
ICBO
-
Emitt«r Cutoff Currant
(V8E - 6.0 Vdc, IC - 01
>6BO
—
ON CHARACTERISTICS HI
DC Current Giin
hFE
(1C - 3.0 Adc. VCE "3.0 Vdc)
MJE 1090, MJE 1O92, MJE 1100. MJE 1102
750
MJE 2090, MJE2092, MJE2100. MJE2102
|_ '50
(1C - 4.0 Adc, VCE - 3.0 Vdc)
MJE1091. MJE 1093, MJE1101, MJE 1103
750
MJE2091. MJE S093, MJE210V MJE 2 103
750
CollKtor-Emitttr Saturation Voltag*
VCEI»I)
IIC -3.0 Adc, IB - 12 mAdc)
MJE 1090. MJE 1092, MJE 1100, MJE 1102
-
MJE2090, MJE 2092. MJE2100, MJE2102
(1C- 4.0 Adc, IB" 16 mAdc)
MJE 1091, MJE 1093, MJE 1101, MJE 1103
-
VUE2091. MJP2093. MJE2101. MJEJJffi) ^
BiM-Emitur On Valtagt
((c • 3.0 Adc, VCE -S.OVdcl
vBE(on)
MJE 1090, MJE 1092, MJE 1)00, MJE 1102
MJE2090. MJE2092. MJE2100. MJE2102
dC - 4.0 Adc. VCE ' 3.0 Vdc)
MJE1091. MJEI093. MJE 1 101, MJE 1 103
MJE2091, MJE2093. MJE2101, MJE2103
_
DYNAMIC CHARACTERISTICS
Snull-Signd Currtnt Gain
dC - 3.0 Adc. VCE - 3.0 Vdc, f - 1 .0 MHz)
hf.
1.0
<"puli« T.,i Pull. Width < 300 ia. Duty Cycl* < 20%
FIGURE 2 - DC SAFE OPERATING AREA
Mix ] Unit |
-
:
5OO
500
500
500
0.2
2.0
2.0
Vdc
uAdc
rnAdc
mAdc
-
-
I
-
Vdc
2.5
._ _2,5
2.8
2.8
Vdc
2.5
2.5
2.B
2.5
-
-
::i==:
'• 1 _{T V}
x-
»c«idiur> tak dOM Hnitfd
_1'.^_ _{bMflta ly L miw O U T t • K"(}
andirv Wir Li niud
V\
- - MJE ion.:_{'l =}
i— ••
- - MJEMOO.!)! I"
r^~
T C'2S«C
MJE2IOO.OI '"
MJE1W.93 1
- - MJE2092.J3 (~ ^«£=
•UCnm.ra i
=A_
\
a i.a 3.0 so it <a
20 30 so ; ₁₀₀
There are two limitations on ih? power handling ability o* a
transistor: junction temperature and secondary breakdown Safe
operating area curves indicate IQ VCE lirYll'!> °' the transistor that
must be observed for reliable operation, e g , the transistor must
not be subjected to greater dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown. (See AN-415)
E. COUECTOW EMITTER VOLTAGE [VOLTS!
FIGURE 3 - DARLINGTON CIRCUIT SCHEMATIC
thru
MJE10I3
MJC2MQ
thru
MJC2QB3
(
.
1
._K
n«^
% 10 k
S ' ,r r
* 150 I 1
.
t
MJE1100 saw 0-4
thru
MJE1103
MJ£2100